1 FMW20N60S1HF fuji power mosfet super j-mos series n-channel enhancement mode power mosfet features low on-state resistance low switching loss easy to use (more controllabe switching dv/dt by r g ) applications ups server telecom power conditioner system power supply outline drawings [mm] equivalent circuit schematic gate(g) source(s) drain(d) con n e c ti o n gat e dr ain s o ur c e dimens i o ns ar e in m i llime t e rs . ? ? ? ? ? ? to-247-p2 http://www.fujielectric.com/products/semiconductor/ maximum ratings and characteristics absolute maximum ratings at t c =25c (unless otherwise specifed) description symbol characteristics unit remarks drain-source voltage v ds 600 v v dsx 600 v v gs =-30v continuous drain current i d 20 a tc=25c note*1 12.6 a tc=100c note*1 pulsed drain current i dp 60 a gate-source voltage v gs 30 v repetitive and non-repetitive maximum avalanche current i ar 6.6 a note *2 non-repetitive maximum avalanche energy e as 472.2 mj note *3 maximum drain-source dv/dt dv ds /dt 50 kv/s v ds 600v peak diode recovery dv/dt dv/dt 15 kv/s note *4 peak diode recovery -di/dt -di/dt 100 a/s note *5 maximum power dissipation p d 2.5 w t a =25c 140 tc=25c operating and storage temperature range t ch 150 c t stg -55 to +150 c note *1 : limited by maximum channel temperature. note *2 : t ch 150c, see fig.1 and fig.2 note *3 : starting t ch =25c, i as =2a, l=216mh, v dd =60v, r g =50, see fig.1 and fig.2 e as limited by maximum channel temperature and avalanche current. note *4 : i f -i d , -di/dt=100a/s, v dd 400v, t ch 150c. note *5 : i f -i d , dv/dt=15kv/s, v dd 400v, t ch 150c. www.datasheet.co.kr datasheet pdf - http://www..net/
2 FMW20N60S1HF 3 fuji power mosfet http://www.fujielectric.com/products/semiconductor/ electrical characteristics at t c =25c (unless otherwise specifed) static ratings description symbol conditions min. typ. max. unit drain-source breakdown voltage bv dss i d =250a v gs =0v 600 - - v gate threshold voltage v gs(th) i d =250a v ds =v gs 2.5 3 3.5 v zero gate voltage drain current i dss v ds =600v v gs =0v t ch =25c - - 25 a v ds =480v v gs =0v t ch =125c - - 250 gate-source leakage current i gss v gs = 30v v ds =0v - 10 100 na drain-source on-state resistance r ds(on) i d =10a v gs =10v - 0.161 0.19 gate resistance r g f=1mhz, open drain - 3.7 - forward transconductance g fs i d =10a v ds =25v 8.5 17.5 - s input capacitance c iss v ds =10v v gs =0v f=1mhz - 1470 - pf output capacitance c oss - 3120 - reverse transfer capacitance c rss - 280 - effective output capacitance, energy related (note *6) c o(er) v gs =0v v ds =0480v - 90 - effective output capacitance, time related (note *7) c o(tr) v gs =0v v ds =0480v id=constant - 305 - turn-on time t d(on) v dd =400v, v gs =10v i d =10a, r g =27 see fig.3 and fig.4 - 22 - ns t r - 40 - turn-off time t d(off) - 162 - t f - 22 - total gate charge q g v dd =480v, i d =20a v gs =10v see fig.5 - 48 - nc gate-source charge q gs - 12.5 - gate-drain charge q gd - 15 - drain-source crossover charge q sw - 8 - avalanche capability i av l=6.02mh,t ch =25c see fig.1 and fig.2 6.6 - - a diode forward on-voltage v sd i f =20a,v gs =0v t ch =25c - 0.9 1.35 v reverse recovery time t rr i f =20a, v gs =0v v dd =400v -di/dt=100a/s t ch =25c see fig.6 370 - ns reverse recovery charge q rr - 6.2 - c peak reverse recovery current i rp - 32 - a thermal characteristics description symbol min. typ. max. unit channel to case r th(ch-c) 0.89 c/w channel to ambient r th(ch-a) 50 c/w note *6 : c o(er) is a fxed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% bv dss . note *7 : c o(tr) is a fxed capacitance that gives the same charging times as c oss while v ds is rising from 0 to 80% bv dss . www.datasheet.co.kr datasheet pdf - http://www..net/
2 3 fuji power mosfet FMW20N60S1HF http://www.fujielectric.com/products/semiconductor/ 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 1 4 0 allowable power dissipation p d = f(t c ) p d [w] t c [c] 1 0 - 1 1 0 0 1 0 1 1 0 2 1 0 3 1 0 - 2 1 0 - 1 1 0 0 1 0 1 1 0 2 i d [a] v ds [v] safe operating area i d = f(v ds ): duty=0(single pulse), t c =25c t = 1s 1 0s 1 m s 1 0 0s 0 5 1 0 1 5 2 0 2 5 0 5 1 0 1 5 2 0 2 5 3 0 3 5 4 0 4 5 5 0 5 5 6 0 8 v 20 v 10 v 6 . 5 v 6 v 5. 5 v 5 v i d [a] v d s [ v ] typical output characteristics i d = f(v ds ): 80s pulse test, t ch =25c v g s =4.5 v 0 5 1 0 1 5 2 0 2 5 0 5 1 0 1 5 2 0 2 5 3 0 3 5 4 0 5 v 8 v 20 v 10 v 6 v 5. 5 v 4. 5 v i d [a] v d s [ v ] typical output characteristics i d = f(v ds ): 80s pulse test, t ch =150c v g s = 4 v 0 5 1 0 1 5 2 0 2 5 3 0 3 5 4 0 4 5 5 0 5 5 6 0 0 . 0 0 . 1 0 . 2 0 . 3 0 . 4 0 . 5 0 . 6 8 v 6 v 5 . 5 v 5 v 6 . 5 v 4 . 5 v r ds(on) [ ? ] i d [a] typical drain-source on-state resistance r ds(on) = f(i d ): 80s pulse test, t ch =25c 1 0 v v g s = 2 0 v 0 5 1 0 1 5 2 0 2 5 3 0 3 5 4 0 0 . 0 0 . 2 0 . 4 0 . 6 0 . 8 1 . 0 1 . 2 1 . 4 4 v 8 v 6 v 5 . 5 v 5 v 4 . 5 v r ds(on) [ ? ] i d [a] typical drain-source on-state resistance r ds(on) = f(i d ): 80s pulse test, t ch =150c 1 0 v v g s = 2 0 v t p d p o w e r l o s s w a v e f o r m : s q u ar e w a ve f o r m t p d t p d p o w e r l o s s w a v e f o r m : s q u ar e w a ve f o r m www.datasheet.co.kr datasheet pdf - http://www..net/
4 FMW20N60S1HF 5 fuji power mosfet http://www.fujielectric.com/products/semiconductor/ - 5 0 - 2 5 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 0 . 0 0 . 1 0 . 2 0 . 3 0 . 4 0 . 5 0 . 6 r d s (o n ) [ ? ] t c h [ c ] t y p . m a x . drain-source on-state resistance r ds(on) = f(t ch ): i d =10a, v gs =10v - 5 0 -2 5 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 0 1 2 3 4 5 6 t y p . gate threshold voltage vs. tch v gs(th) = f(t ch ): v ds =v gs , i d =250a v g s (t h ) [v ] t c h [ c ] 1 0 - 2 1 0 - 1 1 0 0 1 0 1 1 0 2 1 0 - 1 1 0 0 1 0 1 1 0 2 1 0 3 1 0 4 1 0 5 c [ p f ] v d s [ v ] typical capacitance c= f(v ds ): v gs =0v, f=1mhz c r s s c o s s c i s s 0 1 2 3 4 5 6 7 8 9 1 0 1 e - 3 0. 0 1 0 . 1 1 1 0 1 0 0 t c h =25 1 50 i d [ a ] v g s [v ] typical transfer characteristic i d = f(v gs ): 80s pulse test, v ds =25v 0 . 0 0 . 5 1 . 0 1 . 5 2 . 0 0 . 1 1 1 0 1 0 0 t c h =25 1 5 0 i f [ a ] v s d [v ] typical forward characteristics of reverse diode i f = f(v sd ): 80s pulse test 0. 1 1 1 0 1 0 0 0 . 1 1 1 0 1 0 0 1 5 0 t ch = 25 g f s [ s ] i d [a ] typical transconductance g fs = f(i d ): 80s pulse test, v ds =25v www.datasheet.co.kr datasheet pdf - http://www..net/
4 5 fuji power mosfet FMW20N60S1HF http://www.fujielectric.com/products/semiconductor/ 0 10 0 2 0 0 3 0 0 4 0 0 5 0 0 6 0 0 0 2 4 6 8 1 0 1 2 1 4 typical coss stored energy e oss [uj] v ds [v] 0 1 0 2 0 3 0 4 0 5 0 6 0 0 2 4 6 8 1 0 q g [nc] typical gate charge characteristics v gs = f(q g ): i d =20a, v dd =480v, t ch =25c v gs [v] 1 0 - 6 1 0 - 5 1 0 - 4 1 0 - 3 1 0 - 2 1 0 - 1 1 0 0 1 0 - 3 1 0 - 2 1 0 - 1 1 0 0 1 0 1 transient thermal impedance z th(ch-c) = f(t): d=0 z th(ch-c) [c/w] t [s e c ] 1 0 0 1 0 1 1 0 2 1 0 1 1 0 2 1 0 3 typical switching characteristics vs. id t ch =25c t= f(i d ): v dd =400v, v gs =10v/0v, r g =27?, l=500uh t d (o n ) t r t f t d ( o f f ) t [ns] i d [a] 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 0 5 0 1 0 0 1 5 0 2 0 0 2 5 0 3 0 0 3 5 0 4 0 0 4 5 0 5 0 0 i a s = 6 . 6 a i a s = 4 a i a s = 2 a e av [mj] starting t ch [c] maximum avalanche energy vs. startingtch e(av)= f(starting t ch ): v cc =60v, i(av)<=6.6a www.datasheet.co.kr datasheet pdf - http://www..net/
6 FMW20N60S1HF 7 fuji power mosfet http://www.fujielectric.com/products/semiconductor/ 1 m a n u f a c t u r e r co d e no . l o g o t yp e : . / / / t yp e na m e l o t n o . s ym b ol m a r k o f " le a d -f re e " y : l a st d ig i t o f yea r m : m o nth c o d e 1~9 a n d o,n, d nn n : lot s e rial n u m b e r * t h e f o n t ( f on t t yp e , size) a n d t h e log o t yp e s i z e m i gh t b e act u a ll y d i ff e r e n t . i g hf : h a l o g e n - fr e e m a r k con n e c ti o n gat e dr ain s o ur c e dimens i o ns ar e in m i llime t e rs . / 4 ? ? ? ? ? ? outview: to-247-p2 package marking www.datasheet.co.kr datasheet pdf - http://www..net/
6 7 fuji power mosfet FMW20N60S1HF http://www.fujielectric.com/products/semiconductor/ warning 1. this catalog contains the product specifcations, characteristics, data, materials, and structures as of february 2012. the contents are subject to change without notice for specifcation changes or other reasons. when using a product listed in this catalog, be sur to obtain the latest specifcations. 2. all applications described in this catalog exemplify the use of fuji's products for your reference only. no right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by fuji electric co., ltd. is (or shall be deemed) granted. fuji electric co., ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. although fuji electric co., ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. when using fuji electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fre, or other problem if any of the products become faulty. it is recommended to make your design failsafe, fame retardant, and free of malfunction. 4. the products introduced in this catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. ? computers ? oa equipment ? communications equipment (terminal devices) ? measurement equipment ? machine tools ? audiovisual equipment ? electrical home appliances ? personal equipment ? industrial robots etc. 5. if you need to use a product in this catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact fuji electric co., ltd. to obtain prior approval. when using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a fuji's product incorporated in the equipment becomes faulty. ? transportation equipment (mounted on cars and ships) ? trunk communications equipment ? traffc-signal control equipment ? gas leakage detectors with an auto-shut-off feature ? emergency equipment for responding to disasters and anti-burglary devices ? safety devices ? medical equipment 6. do not use products in this catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). ? space equipment ? aeronautic equipment ? nuclear control equipment ? submarine repeater equipment 7. copyright ?1996-2011 by fuji electric co., ltd. all rights reserved. no part of this catalog may be reproduced in any form or by any means without the express permission of fuji electric co., ltd. 8. if you have any question about any portion in this catalog, ask fuji electric co., ltd. or its sales agents before using the product. neither fuji electric co., ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein. www.datasheet.co.kr datasheet pdf - http://www..net/
|
